《半导体学报》 杂志社

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首页 半导体学报文章目录

半导体学报杂志
  • 杂志名称:半导体学报
  • 期刊级别:大学学报
  • 主办单位:中国电子学会和中国科学院半导体研究所
  • 主管单位:中国科学院
  • 国内刊号:CN 11-5781/TN
  • 国际刊号:ISSN 1674-4926
  • 发表周期:月刊
  • 邮发代号:

往期文章

Solid State Physics View of Liquid State Chemistry Ⅱ.Electrical Capacitance of Pure and Impure Water
Substrate temperature effects on the structural and photoelectric properties of ZnS:In films
Optimizing structure for constructing a highly efficient inverted top-emitting organic light-emitting diode with stable electroluminescent spectra
Temperature dependent I Ds-ⅤGs characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate
Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors
A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory
A novel SOI high-voltage SJ-pLDMOS based on self-adaptive charge balance
A novel NLDMOS with a high ballast resistance for ESD protection
The total dose effects on the 1/f noise of deep submicron CMOS transistors
Experimental and theoretical study of an improved breakdown voltage SOILDMOS with a reduced cell pitch
The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model
Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode
Effects of the p-AlInGaN/GaN superlattices“ structure on the performance of blue LEDs
Effects of defect states on the performance of CuInGaSe2 solar cells
1.3-μm 1×4 MMI coupler based on shallow-etched InP ridge waveguides
A dynamic range extension scheme applied to a TDI CMOS image sensor
Dual-band RF receiver for GPS-L1 and compass-B1 in a 55-nm CMOS
A power-efficient 12-bit analog-to-digital converter with a novel constant-resistance CMOS input sampling switch
A 130 nm CMOS low-power SAR ADC for wide-band communication systems
Process variation robust current-mode on-chip interconnect signaling scheme
An effective timing characterization method for an accuracy-proved VLSI standard cell library
A multi coding technique to reduce transition activity in VLSI circuits
Alkaline barrier slurry applied in TSV chemical mechanical planarization
Electrochemical investigation of copper chemical mechanical planarization in alkaline slurry without an inhibitor
Effects of rapid thermal annealing on ohmic contact of AlGaN/GaN HEMTs
A new weakly alkaline slurry for copper planarization at a reduced down pressure
An improved shape shifting method of critical area extraction

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杂志创刊时间:1998年
杂志社地址:北京912信箱
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